A new extraction method of threshold voltage based on temperature effect of a-Si:H TFT

Volume 9, Issue 1, February 2024     |     PP. 1-7      |     PDF (281 K)    |     Pub. Date: January 9, 2024
DOI: 10.54647/physics140606    33 Downloads     134286 Views  

Author(s)

Lei Qiang, School of Medical Information Engineering, Zunyi Medical University, Zunyi, 563000, China; Institute of Science and Technology, University of Sanya, Sanya, 572022,China

Abstract
Based on the double exponential distributions of trap states in the channel of the hydrogenated amorphous silicon thin film transistor (a-Si:H TFT), a new extraction method of the threshold voltage for a-Si:H TFTs has been developed. By taking advantage of the conductivity, the expression of the drain current corresponding to the threshold voltage is obtained. The inclusion of the temperature effect in our model makes accurate the extraction under different temperatures, and results fit well with the experimental data.

Keywords
amorphous, thin film transistor, threshold voltage, temperature

Cite this paper
Lei Qiang, A new extraction method of threshold voltage based on temperature effect of a-Si:H TFT , SCIREA Journal of Physics. Volume 9, Issue 1, February 2024 | PP. 1-7. 10.54647/physics140606

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